STGB8NC60KDT4 vs STGB8NC60K vs STGB8NC60KD

 
PartNumberSTGB8NC60KDT4STGB8NC60KSTGB8NC60KD
DescriptionIGBT Transistors N Ch 100V 0.033 Ohm 25A Pwr MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V+/- 20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGB8NC60KDPowerMESH-
PackagingReelDigi-ReelR Alternate Packaging-
Continuous Collector Current Ic Max15 A15 A-
Height4.6 mm--
Length10.4 mm--
Width9.35 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.079014 oz0.079014 oz-
Package Case-TO-263-3, D2Pak (2 Leads + Tab), TO-263AB-
Input Type-Standard-
Mounting Type-Surface Mount-
Supplier Device Package-D2PAK-
Power Max-65W-
Reverse Recovery Time trr-23.5ns-
Current Collector Ic Max-15A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-30A-
Vce on Max Vge Ic-2.75V @ 15V, 3A-
Switching Energy-55μJ (on), 85μJ (off)-
Gate Charge-19nC-
Td on off 25°C-17ns/72ns-
Test Condition-390V, 3A, 10 Ohm, 15V-
Collector Emitter Voltage VCEO Max-600 V-
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