STB18N60DM2 vs STB18N55M5 vs STB18N20

 
PartNumberSTB18N60DM2STB18N55M5STB18N20
DescriptionMOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK packageMOSFET N-CH 550V 13A D2PAK
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance260 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation90 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingReelReel-
SeriesSTB18N60DM2MDmesh M5-
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Forward Transconductance Min---
Fall Time32.5 ns13 ns-
Product TypeMOSFET--
Rise Time8 ns9.5 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9.5 ns--
Typical Turn On Delay Time13.5 ns--
Unit Weight0.079014 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-90 W-
Vgs Gate Source Voltage-25 V-
Id Continuous Drain Current-13 A-
Vds Drain Source Breakdown Voltage-550 V-
Vgs th Gate Source Threshold Voltage-4 V-
Rds On Drain Source Resistance-180 mOhms-
Qg Gate Charge-31 nC-
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