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| PartNumber | SP8K1TB | SP8K1FU6TB | SP8K1 |
| Description | MOSFET TRANS MOSFET NCH 30V 5A 8PIN | MOSFET 30V 5A N-CHAN DUAL | |
| Manufacturer | ROHM Semiconductor | Rohm Semiconductor | ROHM |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOP-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 36 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | Dual Dual Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 4.4 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 5 ns | 5 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns | 22 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| Unit Weight | 0.030018 oz | 0.030018 oz | - |
| Series | - | - | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SOP | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 2W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 230pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 5A | - |
| Rds On Max Id Vgs | - | 51 mOhm @ 5A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 1mA | - |
| Gate Charge Qg Vgs | - | 5.5nC @ 5V | - |
| Pd Power Dissipation | - | 2 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 5 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 51 mOhms | - |