SIRA18DP-T1-GE3 vs SIRA18DP-T1-RE3 vs SIRA18DP-T1-GE3-G

 
PartNumberSIRA18DP-T1-GE3SIRA18DP-T1-RE3SIRA18DP-T1-GE3-G
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8MOSFET 30V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current33 A33 A-
Rds On Drain Source Resistance6 mOhms6 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V, - 16 V20 V, - 16 V-
Qg Gate Charge21.5 nC21.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation14.7 W14.7 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSIRSIR-
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min54 S54 S-
Fall Time5 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15 ns15 ns-
Typical Turn On Delay Time11 ns11 ns-
Unit Weight0.017870 oz0.017870 oz-
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