RW1A030APT2CR vs RW1A030AP vs RW1A030AP T2R

 
PartNumberRW1A030APT2CRRW1A030APRW1A030AP T2R
DescriptionMOSFET Trans MOSFET P-CH 12V 3A
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-563T-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance30 mOhms--
Vgs Gate Source Voltage8 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation700 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesRW1A030AP--
Transistor Type1 P-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min3.8 S--
Fall Time75 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity8000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time240 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesRW1A030AP--
Unit Weight0.000106 oz--
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