RQ3G100GNTB vs RQ3G100GN vs RQ3G130MN

 
PartNumberRQ3G100GNTBRQ3G100GNRQ3G130MN
DescriptionMOSFET Nch 40V 10A Power MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSMT-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge8.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Fall Time3.2 ns--
Product TypeMOSFET--
Rise Time4.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23.1 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesRQ3G100GN--
Unit Weight0.196723 oz--
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