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| PartNumber | RGW80TK65DGVC11 | RGW80TK65GVC11 | RGW80TS65C11 |
| Description | IGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT | IGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT | IGBT, SINGLE, 650V, 78A, TO-247N |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-3PFM | TO-3PFM | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | - |
| Maximum Gate Emitter Voltage | 30 V | 30 V | - |
| Continuous Collector Current at 25 C | 39 A | 39 A | - |
| Pd Power Dissipation | 81 W | 81 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 39 A | 39 A | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Gate Emitter Leakage Current | 200 nA | 200 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Subcategory | IGBTs | IGBTs | - |