R6020KNZ1C9 vs R6020KNZ4C13 vs R6020KNZ1

 
PartNumberR6020KNZ1C9R6020KNZ4C13R6020KNZ1
DescriptionMOSFET Nch 600V 20A Si MOSFETMOSFET NCH 600V 20A POWER MOSFET
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current20 A20 A-
Rds On Drain Source Resistance170 mOhms196 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge40 nC40 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation231 W231 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Transistor Type1 N-Channel1 N-Channel-
BrandROHM SemiconductorROHM Semiconductor-
Forward Transconductance Min5 S--
Fall Time10 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns-
Factory Pack Quantity45030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time55 ns55 ns-
Typical Turn On Delay Time30 ns30 ns-
Part # AliasesR6020KNZ1--
Unit Weight0.211644 oz--
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