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| PartNumber | PSMN1R5-25YL,115 | PSMN1R5-25YL | PSMN1R5-30BLE |
| Description | MOSFET N-CH TRENCHMOS Logic level FET | ||
| Manufacturer | Nexperia | - | NXP Semiconductors |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | LFPAK56-5 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 1.5 mOhms | - | - |
| Pd Power Dissipation | 109 W | - | - |
| Configuration | Single | - | Single |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Nexperia | - | - |
| Fall Time | 36 ns | - | 99.2 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 97 ns | - | 156.1 ns |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 72 ns | - | 191.8 ns |
| Typical Turn On Delay Time | 50 ns | - | 100.6 ns |
| Unit Weight | 0.003002 oz | - | 0.139332 oz |
| Series | - | - | - |
| Package Case | - | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D2PAK |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 401W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 14934pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 120A (Tc) |
| Rds On Max Id Vgs | - | - | 1.5 mOhm @ 25A, 10V |
| Vgs th Max Id | - | - | 2.15V @ 1mA |
| Gate Charge Qg Vgs | - | - | 228nC @ 10V |
| Pd Power Dissipation | - | - | 401 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.7 V |
| Rds On Drain Source Resistance | - | - | 1.3 mOhms |
| Qg Gate Charge | - | - | 228 nC |
| Channel Mode | - | - | Enhancement |