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| PartNumber | PEMD9,115 | PEMD9,315 | PEMD9 |
| Description | Bipolar Transistors - Pre-Biased TRNS DOUBL RET TAPE7 | Bipolar Transistors - Pre-Biased TransDigital BJT NPN PNP 50V 200mW | DIG.TRANS NPN/PNP 10K 47K AUTO SOT-666, RL |
| Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Arrays, Pre-Biased |
| RoHS | Y | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | NPN, PNP | - | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Typical Resistor Ratio | 0.21 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-666-6 | SOT-666-6 | - |
| DC Collector/Base Gain hfe Min | 100 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Reel | Reel | Digi-ReelR |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Height | 0.6 mm | - | - |
| Length | 1.7 mm | - | - |
| Width | 1.3 mm | - | - |
| Brand | Nexperia | Nexperia | - |
| Number of Channels | 2 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 4000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | PEMD9 T/R | - | - |
| Unit Weight | 0.000099 oz | - | - |
| Series | - | - | - |
| Package Case | - | - | SOT-563, SOT-666 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-666 |
| Power Max | - | - | 300mW |
| Transistor Type | - | - | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current Collector Ic Max | - | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | - | 50V |
| Resistor Base R1 Ohms | - | - | 10k |
| Resistor Emitter Base R2 Ohms | - | - | 47k |
| DC Current Gain hFE Min Ic Vce | - | - | 100 @ 5mA, 5V |
| Vce Saturation Max Ib Ic | - | - | 100mV @ 250μA, 5mA |
| Current Collector Cutoff Max | - | - | 1μA |
| Frequency Transition | - | - | - |