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| PartNumber | NSS20101JT1G | NSS200-50 | NSS20101ST1G |
| Description | Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-89-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 20 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 350 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSS20101J | - | - |
| Height | 0.7 mm | - | - |
| Length | 1.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 0.85 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000095 oz | - | - |