MUR2100EG vs MUR2100ERL vs MUR2100E

 
PartNumberMUR2100EGMUR2100ERLMUR2100E
DescriptionRectifiers 1000V 2A UltraFastRectifiers 1000V 2A UltraFastDIODE GEN PURP 1KV 2A AXIAL
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryRectifiersRectifiersDiodes, Rectifiers - Single
RoHSYN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseDO-41DO-41-
Vr Reverse Voltage100 V1000 V-
If Forward Current2 A2 A-
TypeFast Recovery RectifiersFast Recovery Rectifiers-
ConfigurationSingleSingle-
Vf Forward Voltage940 mV2.2 V-
Max Surge Current35 A35 A-
Ir Reverse Current2 uA10 uA-
Recovery Time20 ns100 ns-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesMUR2100E-SWITCHMODE
PackagingBulkReelBulk
Height2.7 mm2.7 mm (Max)-
Length5.2 mm5.2 mm (Max)-
ProductRectifiersRectifiers-
Termination StyleThrough HoleThrough Hole-
Width2.7 mm2.7 mm (Max)-
BrandON SemiconductorON Semiconductor-
Pd Power Dissipation---
Product TypeRectifiersRectifiers-
Factory Pack Quantity1000--
SubcategoryDiodes & RectifiersDiodes & Rectifiers-
Unit Weight0.010935 oz0.010935 oz-
Package Case--DO-204AL, DO-41, Axial
Mounting Type--Through Hole
Supplier Device Package--Axial
Speed--Fast Recovery = 200mA (Io)
Diode Type--Standard
Current Reverse Leakage Vr--10μA @ 1000V
Voltage Forward Vf Max If--2.2V @ 2A
Voltage DC Reverse Vr Max--1000V (1kV)
Current Average Rectified Io--2A
Reverse Recovery Time trr--100ns
Capacitance Vr F---
Operating Temperature Junction---65°C ~ 175°C
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