MPS650 vs MPS650 H vs MPS6502

 
PartNumberMPS650MPS650 HMPS6502
DescriptionBipolar Transistors - BJT NPN Hi-CurBipolar Transistors - BJT 60Vcbo 40Vceo 5.0Vebo 2.0A 625A
ManufacturerCentral SemiconductorCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT75 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMPS65MPS65-
Height5.33 mm--
Length5.21 mm--
PackagingBulkBulk-
Width4.19 mm--
BrandCentral SemiconductorCentral Semiconductor-
Continuous Collector Current2 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Part # AliasesMPS650 PBFREEMPS650-
Unit Weight0.016000 oz--
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