MMUN2211LT1G vs MMUN2211LT1 vs MMUN2211LT106

 
PartNumberMMUN2211LT1GMMUN2211LT1MMUN2211LT106
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT NPNBipolar Transistors - Pre-Biased 100mA 50V BRT NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationSingleSingle-
Transistor PolarityNPNNPN-
Typical Input Resistor10 kOhms10 kOhms-
Typical Resistor Ratio11-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
DC Collector/Base Gain hfe Min35, 6035-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current0.1 A0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation246 mW246 mW-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMUN2211L--
PackagingReelReel-
DC Current Gain hFE Max3535-
Height0.94 mm0.94 mm-
Length2.9 mm2.9 mm-
Width1.3 mm1.3 mm-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz-
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