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| PartNumber | MJE5850G | MJE5850 | MJE5851 |
| Description | Bipolar Transistors - BJT 8A 300V 80W PNP | TRANS PNP 300V 8A TO220AB | TRANS PNP 350V 8A TO220AB |
| Manufacturer | ON Semiconductor | ON Semiconductor | FSC |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 300 V | - | - |
| Collector Base Voltage VCBO | 350 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | 2 V | - |
| Maximum DC Collector Current | 8 A | 8 A | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MJE5850 | MJE5850 | - |
| Height | 15.75 mm | - | - |
| Length | 10.53 mm | - | - |
| Packaging | Tube | Tube | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 8 A | 8 A | - |
| DC Collector/Base Gain hfe Min | 15 | - | - |
| Pd Power Dissipation | 80 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 80 W | - |
| Collector Emitter Voltage VCEO Max | - | 300 V | - |
| Collector Base Voltage VCBO | - | 350 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| DC Collector Base Gain hfe Min | - | 15 | - |