PartNumber | IXYH40N120B3D1 | IXYH40N120C3 | IXYH40N120B3 |
Description | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors GenX3 1200V XPT IGBT | IGBT Transistors DISC IGBT XPT-GENX3 |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Package / Case | TO-247AD-3 | TO-247AD-3 | TO-247AD-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Series | Planar | IXYH40N120 | - |
Packaging | Tube | Tube | Tube |
Brand | IXYS | IXYS | IXYS |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | XPT, GenX3 | XPT | XPT, GenX3 |
Configuration | - | Single | - |
Collector Emitter Voltage VCEO Max | - | 1200 V | - |
Collector Emitter Saturation Voltage | - | 3.6 V | - |
Maximum Gate Emitter Voltage | - | 30 V | - |
Continuous Collector Current at 25 C | - | 70 A | - |
Pd Power Dissipation | - | 577 W | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Continuous Collector Current Ic Max | - | 70 A | - |
Gate Emitter Leakage Current | - | 100 nA | - |
Unit Weight | - | 1.340411 oz | - |