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| PartNumber | IXTQ22N60P | IXTQ22N50P | IXTQ22N50Q |
| Description | MOSFET 22.0 Amps 600 V 0.33 Ohm Rds | MOSFET 22.0 Amps 500 V 0.27 Ohm Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-3P-3 | TO-3P | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | - |
| Id Continuous Drain Current | 22 A | 22 A | - |
| Rds On Drain Source Resistance | 350 mOhms | 270 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 10 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 400 W | 350 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 20.3 mm | 20.3 mm | - |
| Length | 15.8 mm | 15.8 mm | - |
| Series | IXTQ22N60 | IXTQ22N50 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.9 mm | 4.9 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 21 S | 12 S | - |
| Fall Time | 23 ns | 21 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 ns | 25 ns | - |
| Factory Pack Quantity | 30 | 3 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 60 ns | 72 ns | - |
| Typical Turn On Delay Time | 20 ns | 22 ns | - |
| Unit Weight | 0.194007 oz | 0.194007 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Qg Gate Charge | - | 50 nC | - |