IXTH120P065T vs IXTH12N100 vs IXTH120N15T

 
PartNumberIXTH120P065TIXTH12N100IXTH120N15T
DescriptionMOSFET -120 Amps -65V 0.01 RdsMOSFET 12 Amps 1000V 1.05 RdsMOSFET N-CH 150V 120A TO-247
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelN-Channel-
Vds Drain Source Breakdown Voltage65 V1 kV-
Id Continuous Drain Current120 A12 A-
Rds On Drain Source Resistance10 mOhms1.05 Ohms-
Vgs Gate Source Voltage15 V20 V-
Qg Gate Charge58 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation298 W300 W-
ConfigurationSingleSingle-
PackagingTubeTube-
SeriesIXTH120P065IXTH12N100-
Transistor Type1 P-Channel1 N-Channel-
BrandIXYSIXYS-
Forward Transconductance Min75 S--
Fall Time21 ns32 ns-
Product TypeMOSFETMOSFET-
Rise Time28 ns33 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.229281 oz0.229281 oz-
Channel Mode-Enhancement-
Height-21.46 mm-
Length-16.26 mm-
Width-5.3 mm-
Typical Turn Off Delay Time-62 ns-
Typical Turn On Delay Time-21 ns-
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