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| PartNumber | IXFE48N50Q | IXFE48N50QD3 | IXFE48N50QD2 |
| Description | MOSFET 41 Amps 500V 0.11 Rds | MOSFET 41 Amps 500V 110 Rds | MOSFET 41 Amps 500V 0.11 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Chassis Mount | SMD/SMT | SMD/SMT |
| Package / Case | ISOPLUS-227-4 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 41 A | - | - |
| Rds On Drain Source Resistance | 110 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 400 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HyperFET | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 9.65 mm | - | - |
| Length | 38.23 mm | - | - |
| Series | IXFE48N50Q | IXFE48N50QD3 | IXFE48N50QD2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 25.42 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 10 ns | 10 ns | 10 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | 22 ns | 22 ns |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | 75 ns | 75 ns |
| Typical Turn On Delay Time | 33 ns | 33 ns | 33 ns |
| Package Case | - | ISOPLUS-227-4 | ISOPLUS-227-4 |
| Pd Power Dissipation | - | 400 W | 400 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 41 A | 41 A |
| Vds Drain Source Breakdown Voltage | - | 500 V | 500 V |
| Rds On Drain Source Resistance | - | 110 mOhms | 110 mOhms |