ISL9R18120G2 vs ISL9R18120P2 vs ISL9R18120G2_Q

 
PartNumberISL9R18120G2ISL9R18120P2ISL9R18120G2_Q
DescriptionDiodes - General Purpose, Power, Switching 18A 1200V StealtDIODE GEN PURP 1.2KV 18A TO220ACDiodes - General Purpose, Power, Switching 18A 1200V Stealt
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryDiodes - General Purpose, Power, SwitchingDiodes, Rectifiers - Single-
RoHSE--
Mounting StyleThrough Hole--
Package / CaseTO-247--
Peak Reverse Voltage1200 V--
Max Surge Current200 A--
If Forward Current18 A--
ConfigurationSingle--
Recovery Time70 ns--
Vf Forward Voltage3.3 V--
Ir Reverse Current100 uA--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesISL9R18120G2Stealth-
PackagingTubeTube-
Height20.8 mm--
Length15.8 mm--
TypeSwitching Diode--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Product TypeDiodes - General Purpose, Power, Switching--
Factory Pack Quantity450--
SubcategoryDiodes & Rectifiers--
TradenameSTEALTH--
Vr Reverse Voltage1200 V--
Part # AliasesISL9R18120G2_NL--
Unit Weight0.223284 oz--
Package Case-TO-220-2-
Mounting Type-Through Hole-
Supplier Device Package-TO-220-2L-
Speed-Fast Recovery = 200mA (Io)-
Diode Type-Standard-
Current Reverse Leakage Vr-100μA @ 1200V-
Voltage Forward Vf Max If-3.3V @ 18A-
Voltage DC Reverse Vr Max-1200V (1.2kV)-
Current Average Rectified Io-18A-
Reverse Recovery Time trr-70ns-
Capacitance Vr F---
Operating Temperature Junction--55°C ~ 150°C-
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