IRLZ14PBF vs IRLZ14 vs IRLZ14L

 
PartNumberIRLZ14PBFIRLZ14IRLZ14L
DescriptionMOSFET N-CH 60V HEXFET MOSFETMOSFET N-CH 60V 10A TO-220ABMOSFET N-CH 60V 10A TO-262
ManufacturerVishayIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSE--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance200 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage5 V--
Qg Gate Charge8.4 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation43 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesIRLZ--
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / Siliconix--
Forward Transconductance Min3.5 S--
Fall Time26 ns26 ns-
Product TypeMOSFET--
Rise Time110 ns110 ns-
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns17 ns-
Typical Turn On Delay Time9.3 ns9.3 ns-
Unit Weight0.211644 oz0.211644 oz-
Package Case-TO-220-3-
Pd Power Dissipation-43 W-
Vgs Gate Source Voltage-10 V-
Id Continuous Drain Current-10 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-200 mOhms-
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