IRFS4321TRLPBF vs IRFS4321TRL7PP vs IRFS4321TRLPBF,IRFS4321

 
PartNumberIRFS4321TRLPBFIRFS4321TRL7PPIRFS4321TRLPBF,IRFS4321
DescriptionMOSFET MOSFT 100V 96A 10mOhm 120nC QgMOSFET N-CH 150V 86A D2PAK
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current85 A--
Rds On Drain Source Resistance12 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge110 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation350 W--
ConfigurationSingleSingle-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon / IR--
Forward Transconductance Min130 S--
Fall Time35 ns35 ns-
Product TypeMOSFET--
Rise Time60 ns60 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns25 ns-
Typical Turn On Delay Time18 ns18 ns-
Part # AliasesSP001565002--
Unit Weight0.139332 oz0.056438 oz-
Package Case-TO-263-7-
Pd Power Dissipation-350 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-86 A-
Vds Drain Source Breakdown Voltage-150 V-
Vgs th Gate Source Threshold Voltage-3 V-
Rds On Drain Source Resistance-11.7 mOhms-
Qg Gate Charge-71 nC-
Forward Transconductance Min-130 S-
Channel Mode-Enhancement-
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