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| PartNumber | IRF9952PBF | IRF9952 | IRF9952Q |
| Description | MOSFET 30V DUAL N / P CH 20V VGS MAX | MOSFET N/P-CH 30V 8-SOIC | |
| Manufacturer | Infineon | Infineon Technologies | IR |
| Product Category | MOSFET | IC Chips | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 3.5 A | - | - |
| Rds On Drain Source Resistance | 150 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Type | Power MOSFET | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 3 ns, 6.9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.8 ns, 14 ns | - | - |
| Factory Pack Quantity | 95 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns, 20 ns | - | - |
| Typical Turn On Delay Time | 6.2 ns, 9.7 ns | - | - |
| Part # Aliases | SP001566518 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Series | - | HEXFETR | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 2W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 190pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 3.5A, 2.3A | - |
| Rds On Max Id Vgs | - | 100 mOhm @ 2.2A, 10V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 14nC @ 10V | - |