IPW90R120C3 vs IPW90R120 vs IPW90R120C

 
PartNumberIPW90R120C3IPW90R120IPW90R120C
DescriptionMOSFET N-Ch 900V 36A TO247-3 CoolMOS C3
ManufacturerInfineonINFINEONINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CasePG-TO-247-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current36 A--
Rds On Drain Source Resistance120 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge270 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation417 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameCoolMOSCoolMOSCoolMOS
PackagingTubeTubeTube
Height21.1 mm--
Length16.13 mm--
SeriesCoolMOS C3CoolMOS C3CoolMOS C3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.21 mm--
BrandInfineon Technologies--
Fall Time25 ns24 ns24 ns
Product TypeMOSFET--
Rise Time20 ns20 ns20 ns
Factory Pack Quantity240--
SubcategoryMOSFETs--
Typical Turn Off Delay Time400 ns400 ns400 ns
Typical Turn On Delay Time70 ns70 ns70 ns
Part # AliasesIPW90R120C3FKSA1 IPW9R12C3XK SP000413750--
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Part Aliases-IPW90R120C3FKSA1 IPW90R120C3XK SP000413750IPW90R120C3FKSA1 IPW90R120C3XK SP000413750
Package Case-TO-247-3TO-247-3
Pd Power Dissipation-417 W417 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-36 A36 A
Vds Drain Source Breakdown Voltage-900 V900 V
Rds On Drain Source Resistance-120 mOhms120 mOhms
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