IPI70N04S4-06 vs IPI70N04S307AKSA1 vs IPI70N04S3-07

 
PartNumberIPI70N04S4-06IPI70N04S307AKSA1IPI70N04S3-07
DescriptionMOSFET N-Ch 40V 70A I2PAK-3 OptiMOS-T2MOSFET N-CHANNEL_30/40VMOSFET N-Ch 40V 70A I2PAK-3 OptiMOS-T
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance6.2 mOhms--
ConfigurationSingleSingleSingle
QualificationAEC-Q101--
TradenameOptiMOS-OptiMOS
PackagingTubeTubeTube
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
SeriesOptiMOS-T2-OptiMOS-T
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity500--
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPI70N04S406AKSA1 IPI7N4S46XK SP000711484IPI70N04S3-07 IPI70N04S307XK SP000279551-
Unit Weight0.073511 oz-0.084199 oz
Part Aliases--IPI70N04S307AKSA1 IPI70N04S307XK SP000279551
Package Case--I2PAK-3
Pd Power Dissipation--79 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 55 C
Fall Time--7 ns
Rise Time--8 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--70 A
Vds Drain Source Breakdown Voltage--40 V
Rds On Drain Source Resistance--7.1 mOhms
Typical Turn Off Delay Time--17 ns
Typical Turn On Delay Time--13 ns
Channel Mode--Enhancement
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