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| PartNumber | IPG20N04S4L-08 | IPG20N04S4L07AATMA1 | IPG20N04S4L07ATMA1 |
| Description | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | MOSFET N-Ch 40V 20A TDSON-8 | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 7.2 mOhms, 7.2 mOhms | 7.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.7 V | - |
| Vgs Gate Source Voltage | 16 V | 16 V | - |
| Qg Gate Charge | 39 nC, 39 nC | 39 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 54 W | 65 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS-T2 | IPG20N04 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 20 ns, 20 ns | 25 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3 ns, 3 ns | 4 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns, 40 ns | 50 ns | - |
| Typical Turn On Delay Time | 7 ns, 7 ns | 9 ns | - |
| Part # Aliases | IPG20N04S4L08ATMA1 IPG2N4S4L8XT SP000705576 | IPG20N04S4L-07A SP001061264 | - |