IPG20N04S4L-07 vs IPG20N04S4L-08 vs IPG20N04S4L-07A

 
PartNumberIPG20N04S4L-07IPG20N04S4L-08IPG20N04S4L-07A
DescriptionMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2DUAL N-CH 40V 20A 6,5mOhm
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current20 A20 A-
Rds On Drain Source Resistance8 mOhms7.2 mOhms, 7.2 mOhms-
Vgs Gate Source Voltage16 V16 V-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation65 W54 W-
ConfigurationDualDual-
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS-T2OptiMOS-T2-
Transistor Type2 N-Channel2 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPG20N04S4L07ATMA1 IPG2N4S4L7XT SP000705484IPG20N04S4L08ATMA1 IPG2N4S4L8XT SP000705576-
Unit Weight0.010582 oz--
Vgs th Gate Source Threshold Voltage-1.2 V-
Qg Gate Charge-39 nC, 39 nC-
Minimum Operating Temperature-- 55 C-
Channel Mode-Enhancement-
Fall Time-20 ns, 20 ns-
Rise Time-3 ns, 3 ns-
Typical Turn Off Delay Time-40 ns, 40 ns-
Typical Turn On Delay Time-7 ns, 7 ns-
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