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| PartNumber | IPD80R3K3P7ATMA1 | IPD80R360P7ATMA1 | IPD80R360P7 |
| Description | MOSFET | MOSFET | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DPAK-3 | DPAK-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
| Id Continuous Drain Current | 1.9 A | 13 A | - |
| Rds On Drain Source Resistance | 2.8 Ohms | 310 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 5.8 nC | 30 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 18 W | 84 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Series | CoolMOS P7 | CoolMOS P7 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 40 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 6 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | - |
| Typical Turn On Delay Time | 12 ns | 10 ns | - |
| Part # Aliases | IPD80R3K3P7 SP001636440 | IPD80R360P7 SP001633516 | - |