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| PartNumber | IPD30N03S2L-10 | IPD30N03S2L-07 | IPD30N03S2L-08 |
| Description | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | |
| Manufacturer | Infineon | infineon | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 10 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 10 ns | 16 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns | 30 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 29 ns | 40 ns | - |
| Typical Turn On Delay Time | 7 ns | 10 ns | - |
| Part # Aliases | IPD30N03S2L10ATMA1 IPD3N3S2L1XT SP000254465 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Series | - | OptiMOS | - |
| Part Aliases | - | IPD30N03S2L07ATMA1 IPD30N03S2L07XT SP000254463 | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 136 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 30 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 6.7 mOhms | - |