 |  | | |
| PartNumber | HN1A01FE-GR,LF | HN1A01FE-GRLFTR-ND | HN1A01FE-GR |
| Description | Bipolar Transistors - BJT Bias Resistor Built-in transistor | ||
| Manufacturer | Toshiba | - | TOSHIBA |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Arrays |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ES6-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Collector Base Voltage VCBO | - 50 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.3 V | - | - |
| Maximum DC Collector Current | - 150 mA | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Series | HN1A01 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | - 150 mA | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |