FCH110N65F-F155 vs FCH110N65F vs FCH111

 
PartNumberFCH110N65F-F155FCH110N65FFCH111
DescriptionMOSFET SuperFET2 650V, 110 mOhm, FRFET
ManufacturerON Semiconductor-SIEM
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance110 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V, 30 V--
Qg Gate Charge98 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation357 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.82 mm--
Length15.87 mm--
SeriesFCH110N65F--
Transistor Type1 N-Channel--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min30 S--
Fall Time5.7 ns--
Product TypeMOSFET--
Rise Time21 ns--
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time89 ns--
Typical Turn On Delay Time31 ns--
Part # AliasesFCH110N65F_F155--
Unit Weight0.225401 oz--
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