DN3545N3-G vs DN3545N3-G P002 vs DN3545N3-G P003

 
PartNumberDN3545N3-GDN3545N3-G P002DN3545N3-G P003
DescriptionMOSFET 450V 20OhmMOSFET N-Channel MOSFET 450V 0.136A 3P TO-92RF Bipolar Transistors MOSFET N-Channel MOSFET 450V 0.136A 3P TO-92
ManufacturerMicrochipMicrochipMicrochip Technology
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage450 V450 V-
Id Continuous Drain Current136 mA136 mA-
Rds On Drain Source Resistance20 Ohms20 Ohms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation740 mW740 mW-
ConfigurationSingleSingleSingle
Channel ModeDepletionDepletionDepletion
PackagingBulkReelReel
Height5.33 mm5.33 mm-
Length5.21 mm5.21 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeFET--
Width4.19 mm4.19 mm-
BrandMicrochip TechnologyMicrochip Technology-
Forward Transconductance Min150 mS--
Fall Time40 ns40 ns40 ns
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns30 ns
Factory Pack Quantity10002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns30 ns30 ns
Typical Turn On Delay Time20 ns20 ns20 ns
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Package Case--TO-92-3
Pd Power Dissipation--740 mW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--136 mA
Vds Drain Source Breakdown Voltage--450 V
Rds On Drain Source Resistance--20 Ohms
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