BSC020N03MS G vs BSC020N03MSGATMA1 vs BSC020N03MSGINTR-ND

 
PartNumberBSC020N03MS GBSC020N03MSGATMA1BSC020N03MSGINTR-ND
DescriptionMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3MMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current25 A100 A-
Rds On Drain Source Resistance1.7 mOhms1.7 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge60 nC60 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation96 W96 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3MOptiMOS 3M-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min60 S60 S-
Fall Time14 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time14 ns14 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time36 ns36 ns-
Typical Turn On Delay Time27 ns27 ns-
Part # AliasesBSC020N03MSGATMA1 BSC2N3MSGXT SP000311503BSC020N03MS BSC2N3MSGXT G SP000311503-
Unit Weight0.006349 oz0.005573 oz-
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