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| PartNumber | BFU730F,115 | BFU730F,115-CUT TAPE | BFU730F |
| Description | RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS | ||
| Manufacturer | NXP | - | NXP |
| Product Category | RF Bipolar Transistors | - | IC Chips |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| DC Collector/Base Gain hfe Min | 205 | - | - |
| Collector Emitter Voltage VCEO Max | 2.8 V | - | - |
| Emitter Base Voltage VEBO | 1 V | - | - |
| Continuous Collector Current | 5 mA | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT343F-4 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 10 V | - | - |
| DC Current Gain hFE Max | 555 | - | - |
| Height | 0.75 mm | - | - |
| Length | 2.2 mm | - | - |
| Operating Frequency | 55 GHz | - | - |
| Type | RF Silicon Germanium | - | - |
| Width | 1.35 mm | - | - |
| Brand | NXP Semiconductors | - | - |
| Pd Power Dissipation | 197 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 934064614115 | - | - |
| Unit Weight | 0.000235 oz | - | - |