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| PartNumber | BFS 483 H6327 | BFS 483 E6327 | BFS483 |
| Description | RF Bipolar Transistors RF BIP TRANSISTOR | Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | RF Bipolar Transistors | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Series | BFS483 | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | NPN | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Collector Emitter Voltage VCEO Max | 12 V | 12 V | - |
| Emitter Base Voltage VEBO | 2 V | 2 V | - |
| Continuous Collector Current | 65 mA | 0.065 A | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363 | SOT-363-6 | - |
| Packaging | Reel | Reel | - |
| Operating Frequency | 8 GHz | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Maximum DC Collector Current | 65 mA | 0.065 A | - |
| Pd Power Dissipation | 450 mW | 450 mW | - |
| Product Type | RF Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BFS483H6327XT BFS483H6327XTSA1 SP000750464 | BFS483E6327XT | - |
| Unit Weight | 0.000212 oz | 0.000265 oz | - |
| Configuration | - | Dual | - |
| Collector Base Voltage VCBO | - | 20 V | - |
| Gain Bandwidth Product fT | - | 8000 MHz | - |
| Height | - | 0.9 mm | - |
| Length | - | 2 mm | - |
| Width | - | 1.25 mm | - |