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| PartNumber | BFP 740 H6327 | BFP740H6327XTSA1 | BFP740H6327XTSA1-CUT TAPE |
| Description | RF Bipolar Transistors RF BIP TRANSISTOR | RF Bipolar Transistors RF BIP TRANSISTOR | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
| RoHS | Y | Y | - |
| Series | BFP740 | BFP740 | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | Si | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 160 | - | - |
| Collector Emitter Voltage VCEO Max | 4 V | - | - |
| Emitter Base Voltage VEBO | 1.2 V | - | - |
| Continuous Collector Current | 30 mA | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-343 | SOT-343-4 | - |
| Packaging | Reel | Reel | - |
| Operating Frequency | 42 GHz | - | - |
| Type | RF Silicon Germanium | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Pd Power Dissipation | 160 mW | - | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BFP740H6327XTSA1 BFP74H6327XT SP000750414 | 740 BFP BFP74H6327XT H6327 SP000750414 | - |
| Unit Weight | 0.000066 oz | 0.000226 oz | - |