BD678A vs BD678AG vs BD678AS

 
PartNumberBD678ABD678AGBD678AS
DescriptionDarlington Transistors PNP Power DarlingtonDarlington Transistors 4A 60V Bipolar Power PNPDarlington Transistors PNP Epitaxial Sil
ManufacturerSTMicroelectronicsON SemiconductorFairchild Semiconductor
Product CategoryDarlington TransistorsDarlington TransistorsTransistors (BJT) - Single, Pre-Biased
RoHSYY-
ConfigurationSingleSingleSingle
Transistor PolarityPNPPNPPNP
Collector Emitter Voltage VCEO Max60 V60 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Base Voltage VCBO60 V60 V-
Maximum DC Collector Current4 A4 A4 A
Maximum Collector Cut off Current200 uA200 uA200 uA
Pd Power Dissipation40 W--
Mounting StyleSMD/SMTThrough HoleThrough Hole
Package / CaseSOT-32SOT-23-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesBD678ABD678A-
Height10.8 mm11.04 mm-
Length7.8 mm7.74 mm-
Width2.7 mm2.66 mm-
BrandSTMicroelectronicsON Semiconductor-
Continuous Collector Current4 A-- 4 A
DC Collector/Base Gain hfe Min750750-
Product TypeDarlington TransistorsDarlington Transistors-
Factory Pack Quantity2000500-
SubcategoryTransistorsTransistors-
Minimum Operating Temperature-- 55 C-
Packaging-BulkBulk
Unit Weight-0.000282 oz0.026843 oz
Part Aliases--BD678AS_NL
Package Case--TO-225AA, TO-126-3
Mounting Type--Through Hole
Supplier Device Package--TO-126
Power Max--14W
Transistor Type--PNP - Darlington
Current Collector Ic Max--4A
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--750 @ 2A, 3V
Vce Saturation Max Ib Ic--2.8V @ 40mA, 2A
Current Collector Cutoff Max--500μA
Frequency Transition---
Pd Power Dissipation--14 W
Collector Emitter Voltage VCEO Max--60 V
Collector Base Voltage VCBO--60 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--750
Top