BCW89,215 vs BCW89 T/R vs BCW89

 
PartNumberBCW89,215BCW89 T/RBCW89
DescriptionBipolar Transistors - BJT TRANS GP TAPE-7TRANS PNP 60V 0.5A SOT23
ManufacturerNexperiaCENTRALFairchild Semiconductor
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.1 A-0.5 A
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 65 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
DC Current Gain hFE Max120 at 2 mA, 5 V-260
Height1 mm--
Length3 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width1.4 mm--
BrandNexperia--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation250 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesBCW89 T/R--
Unit Weight0.000282 oz-0.002116 oz
Series---
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23-3
Power Max--350mW
Transistor Type--PNP
Current Collector Ic Max--500mA
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--120 @ 2mA, 5V
Vce Saturation Max Ib Ic--300mV @ 500μA, 10mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition---
Pd Power Dissipation--350 mW
Collector Emitter Voltage VCEO Max--- 60 V
Collector Emitter Saturation Voltage--- 0.3 V
Collector Base Voltage VCBO--- 60 V
Emitter Base Voltage VEBO--- 5 V
Continuous Collector Current--0.5 A
DC Collector Base Gain hfe Min--120
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