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| PartNumber | BCM 856S H6327 | BCM856SH6327XTSA1 | BCM856SH6327XTSAI |
| Description | Bipolar Transistors - BJT AF TRANSISTOR | Bipolar Transistors - BJT AF TRANSISTOR | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 65 V | 65 V | - |
| Collector Base Voltage VCBO | 80 V | 80 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 250 mV | 250 mV | - |
| Maximum DC Collector Current | 200 mA | 200 mA | - |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BCM856 | BCM856 | - |
| DC Current Gain hFE Max | 630 | 630 | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| DC Collector/Base Gain hfe Min | 200 | 200 | - |
| Pd Power Dissipation | 250 mW | 250 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BCM856SH6327XT BCM856SH6327XTSA1 SP000747592 | 856S BCM BCM856SH6327XT H6327 SP000747592 | - |
| Unit Weight | 0.000212 oz | 0.000265 oz | - |