AUIRFR024NTRL vs AUIRFR024N vs AUIRFR024NTR

 
PartNumberAUIRFR024NTRLAUIRFR024NAUIRFR024NTR
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 75mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 75mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 75mOhms
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current17 A17 A-
Rds On Drain Source Resistance75 mOhms75 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge20 nC13.3 nC-
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation45 W45 W-
ConfigurationSingleSingleSingle Quint Source
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101AEC-Q101-
PackagingReelTubeReel
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min4.5 S--
Fall Time27 ns-27 ns
Product TypeMOSFETMOSFET-
Rise Time34 ns-34 ns
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns-19 ns
Typical Turn On Delay Time4.9 ns-4.9 ns
Part # AliasesSP001522686SP001515958-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--45 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--17 A
Vds Drain Source Breakdown Voltage--55 V
Vgs th Gate Source Threshold Voltage--4 V
Rds On Drain Source Resistance--75 mOhms
Qg Gate Charge--20 nC
Forward Transconductance Min--4.5 S
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