 |  | | |
| PartNumber | 2SC2712-Y(TE85L,F) | 2SC2712-Y(TE85L) | 2SC2712-Y(TE85R,F) |
| Description | Bipolar Transistors - BJT 150mA 50V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | USM-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 0.15 A | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Series | 2SC2712 | - | - |
| DC Current Gain hFE Max | 240 | - | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.5 mm | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 150 mA | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |