2SB1182TLR vs 2SB1182TLQ vs 2SB1182 TL

 
PartNumber2SB1182TLR2SB1182TLQ2SB1182 TL
DescriptionBipolar Transistors - BJT PNP 32V 2ABipolar Transistors - BJT D-PAK;BCE PNP;DRIVER SMT HFE RANK Q
ManufacturerROHM SemiconductorROHM SemiconductorROHM
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max32 V- 32 V-
Collector Base Voltage VCBO- 32 V- 40 V-
Emitter Base Voltage VEBO5 V- 5 V-
Maximum DC Collector Current2 A2 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2SB11822SB1182-
DC Current Gain hFE Max180390-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
PackagingReelReel-
Width5.5 mm5.5 mm-
BrandROHM SemiconductorROHM Semiconductor-
Continuous Collector Current- 2 A- 2 A-
DC Collector/Base Gain hfe Min18082-
Pd Power Dissipation10000 mW10 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Unit Weight0.009185 oz0.009185 oz-
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