2N6341G vs 2N6340 vs 2N6341

 
PartNumber2N6341G2N63402N6341
DescriptionBipolar Transistors - BJT 25A 150V 200W NPNBipolar Transistors - BJT Power BJTBipolar Transistors - BJT Power BJT
ManufacturerON SemiconductorMicrochipMicrochip
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYNN
Mounting StyleThrough Hole--
Package / CaseTO-204-2--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max150 V--
Collector Base Voltage VCBO180 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage1.8 V--
Maximum DC Collector Current25 A--
Gain Bandwidth Product fT40 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N6341--
Height8.51 mm--
Length39.37 mm--
PackagingTrayTrayTray
Width26.67 mm--
BrandON SemiconductorMicrochip / MicrosemiMicrochip / Microsemi
Continuous Collector Current25 A--
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity10011
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.056438 oz--
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