 |  | | |
| PartNumber | 2N6211 PBFREE | 2N6210 | 2N6211 |
| Description | Bipolar Transistors - BJT PNP 275Vcbo 225Vceo 6.0Vebo | Bipolar Transistors - BJT | |
| Manufacturer | Central Semiconductor | - | Microsemi |
| Product Category | Bipolar Transistors - BJT | - | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-66-2 | - | - |
| Transistor Polarity | PNP | - | PNP |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 225 V | - | - |
| Collector Base Voltage VCBO | 275 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 1.4 V | - | - 1.4 V |
| Gain Bandwidth Product fT | 20 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| Series | 2N62 | - | - |
| DC Current Gain hFE Max | 100 at 1 A, 2.8 V | - | - |
| Packaging | Tube | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 2 A | - | - |
| DC Collector/Base Gain hfe Min | 10 at 1 A, 2.8 V | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | Transistors | - | - |
| Package Case | - | - | TO-66-2 |
| Collector Emitter Voltage VCEO Max | - | - | - 225 V |
| Collector Base Voltage VCBO | - | - | - 275 V |
| Emitter Base Voltage VEBO | - | - | - 6 V |
| Maximum DC Collector Current | - | - | - 2 A |