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| PartNumber | 2N5151 | 2N5151L | 2N5150 |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-39-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 5.5 V | - | - |
| Collector Emitter Saturation Voltage | 750 mV | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 90 at 2.5 A, 5 VDC | - | - |
| Packaging | Bulk | Foil Bag | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| DC Collector/Base Gain hfe Min | 30 at 2.5 A, 5 VDC | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |