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STGW8M120DF3

STGW8M120DF3
Mfr. #:
STGW8M120DF3
Өндіруші:
STMicroelectronics
Сипаттама:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
STGW8M120DF3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
STGW8M120DF3 Көбірек ақпарат STGW8M120DF3 Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
STMicroelectronics
Өнім санаты:
IGBT транзисторлары
RoHS:
Y
Технология:
Си
Пакет/қорап:
TO-247-3
Орнату стилі:
Тесік арқылы
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
1200 V
Коллектор-эмиттер қанығу кернеуі:
1.85 V
Шықпа эмитентінің максималды кернеуі:
20 V
Үздіксіз коллектор тогы 25 С:
16 A
Pd - қуаттың шығыны:
167 W
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Серия:
STGW8M120DF3
Қаптама:
Түтік
Бренд:
STMicroelectronics
Шлюз-эмиттер ағып кету тогы:
250 uA
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
600
Ішкі санат:
IGBT
Бірлік салмағы:
0.211644 oz
Tags
STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
***ical
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1200V, 16A, TO-247-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Бөлім № Mfg. Сипаттама Қор Бағасы
STGW8M120DF3
DISTI # V99:2348_18695401		STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 1:$3.6047
STGW8M120DF3
DISTI # 497-17619-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2520:$1.7500
  • 510:$2.1787
  • 120:$2.5594
  • 30:$2.9530
  • 10:$3.1240
  • 1:$3.4800
STGW8M120DF3
DISTI # 33130727		STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 4:$3.6047
STGW8M120DF3
DISTI # STGW8M120DF3		STMicroelectronicsSTMSTGW8M120DF3 - Trays (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 1800:$1.4900
  • 3000:$1.4900
  • 6000:$1.4900
  • 600:$1.5900
  • 1200:$1.5900
STGW8M120DF3
DISTI # STGW8M120DF3		STMicroelectronicsSTMSTGW8M120DF3 (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 30		Europe - 0
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 60:€1.6900
  • 30:€1.7900
STGW8M120DF3
DISTI # 38AC2424		STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°CRoHS Compliant: Yes0
  • 500:$2.0900
  • 250:$2.3300
  • 100:$2.4500
  • 50:$2.5800
  • 25:$2.7100
  • 10:$2.8400
  • 1:$3.3300
STGW8M120DF3
DISTI # 511-STGW8M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
RoHS: Compliant		600
  • 1:$3.3000
  • 10:$2.8100
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
STGW8M120DF3
DISTI # IGBT2611		STMicroelectronicsIGBT 1200V8A 1,85VTO-247Stock DE - 0Stock HK - 0Stock US - 0
  • 600:$1.8600
STGW8M120DF3
DISTI # 2797964		STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-3
RoHS: Compliant		0
  • 2520:$2.8000
  • 1020:$2.9400
  • 510:$3.4900
  • 120:$4.3100
  • 30:$4.7300
  • 1:$5.8800
STGW8M120DF3
DISTI # 2797964		STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-30
  • 500:£1.5200
  • 250:£1.6900
  • 100:£1.7800
  • 10:£2.0500
  • 1:£2.7300
Сурет Бөлім № Сипаттама
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3

 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3-STMICROELECTRONICS

 TRENCH GATE FIELD-STOP IGBT M SE
Қол жетімділік
Қор:
598
Тапсырыс бойынша:
2581
Саны енгізіңіз:
STGW8M120DF3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
3,30 $
3,30 $
10
2,81 $
28,10 $
100
2,43 $
243,00 $
250
2,31 $
577,50 $
500
2,07 $
1 035,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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