OMO ElectronicOMO Electronic
Expand menu
0 Арба

SIA533EDJ-T1-GE3

SIA533EDJ-T1-GE3
Mfr. #:
SIA533EDJ-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET -12V Vds 8V Vgs PowerPAK SC-70
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SIA533EDJ-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA533EDJ-T1-GE3 DatasheetSIA533EDJ-T1-GE3 Datasheet (P4-P6)SIA533EDJ-T1-GE3 Datasheet (P7-P9)SIA533EDJ-T1-GE3 Datasheet (P10-P12)SIA533EDJ-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Көбірек ақпарат:
SIA533EDJ-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PowerPAK-SC70-6
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арнасы, P-арнасы
Vds - ағызу көзінің бұзылу кернеуі:
12 V
Идентификатор - үздіксіз төгу тогы:
4.5 A
Rds On - ағызу көзіне қарсылық:
34 mOhms, 59 mOhms
Vgs th - Gate-Source шекті кернеуі:
400 mV
Vgs - Шлюз көзі кернеуі:
8 V
Qg - қақпа заряды:
10 nC, 13 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
7.8 W
Конфигурация:
Қосарлы
Арна режимі:
Жақсарту
Сауда атауы:
TrenchFET, PowerPAK
Қаптама:
Ролик
Биіктігі:
0.75 mm
Ұзындығы:
2.05 mm
Серия:
SIA
Транзистор түрі:
1 N-Channel, 1 P-Channel
Ені:
2.05 mm
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
21 S, 11 S
Күз уақыты:
10 ns, 10 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
10 ns, 15 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
20 ns, 25 ns
Қосудың әдеттегі кешігу уақыты:
10 ns, 15 ns
Бөлім # Бүркеншік аттар:
SIA533EDJ-GE3
Бірлік салмағы:
0.000988 oz
Tags
SIA53, SIA5, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.5 A; 12 V; 6-Pin SC-70
***ure Electronics
SiA533EDJ Series Dual N & P Channel 12 V 34 mOhm 7.8 W Mosfet - PowerPAK SC-70-6
***et Europe
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R
***C
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70
***Components
Trans MOSFET N/P-CH 12V 4.5A
***i-Key
MOSFET N/P-CH 12V 4.5A SC70-6
***
N- AND P-CHANNEL 12-V (D-S)
***ark
Transistor Polarity:n And P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.028Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv; Power Dissipation Pd:7.8W Rohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Бөлім № Mfg. Сипаттама Қор Бағасы
SIA533EDJ-T1-GE3
DISTI # V72:2272_09216848		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R2640
  • 1000:$0.2126
  • 500:$0.2515
  • 250:$0.3041
  • 100:$0.3051
  • 25:$0.3797
  • 10:$0.3814
  • 1:$0.4597
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		91879In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		91879In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		90000In Stock
  • 3000:$0.2302
SIA533EDJ-T1-GE3
DISTI # 30208455		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R2640
  • 1000:$0.2126
  • 500:$0.2515
  • 250:$0.3041
  • 100:$0.3051
  • 34:$0.3797
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.4679
  • 6000:€0.3189
  • 12000:€0.2749
  • 18000:€0.2539
  • 30000:€0.2359
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA533EDJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1959
  • 6000:$0.1899
  • 12000:$0.1819
  • 18000:$0.1769
  • 30000:$0.1729
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIA533EDJ-T1-GE3
    DISTI # 04X9740    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
    • 1:$0.7600
    • 10:$0.6400
    • 25:$0.5860
    • 50:$0.5330
    • 100:$0.4790
    • 500:$0.3510
    • 1000:$0.2710
    SIA533EDJ-T1-GE3
    DISTI # 86R3786    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$0.2300
    • 3000:$0.2300
    SIA533EDJ-T1-GE3.
    DISTI # 15AC4247    		Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:7.8W , RoHS Compliant: No0
    • 1:$0.2300
    • 3000:$0.2300
    SIA533EDJ-T1-GE3
    DISTI # 70616551    		Vishay SiliconixSIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor,4.5 A,12 V,6-Pin SC-70
    RoHS: Compliant    		0
    • 300:$0.4300
    • 600:$0.3800
    • 1500:$0.3400
    • 3000:$0.3000
    SIA533EDJ-T1-GE3
    DISTI # 781-SIA533EDJ-T1-GE3    		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs PowerPAK SC-70
    RoHS: Compliant    		9531
    • 1:$0.6400
    • 10:$0.4880
    • 100:$0.3620
    • 500:$0.2980
    • 1000:$0.2300
    • 3000:$0.2100
    • 6000:$0.1960
    • 9000:$0.1830
    SIA533EDJ-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs PowerPAK SC-70
    RoHS: Compliant    		Americas - 3000
      SIA533EDJ-T1-GE3
      DISTI # C1S803601730507      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2640
      • 250:$0.3042
      • 100:$0.3051
      • 25:$0.3797
      • 10:$0.3814
      Сурет Бөлім № Сипаттама
      AD4002BRMZ

      Mfr.#: AD4002BRMZ

      OMO.#: OMO-AD4002BRMZ

      		 Analog to Digital Converters - ADC 18-Bit, 2 MSPS
      AT25M02-SSHM-T

      Mfr.#: AT25M02-SSHM-T

      OMO.#: OMO-AT25M02-SSHM-T

      		 EEPROM 1.7-5.5V, 5MHz, Ind Tmp, 8-SOIC-N
      NRVTS2H60ESFT1G

      Mfr.#: NRVTS2H60ESFT1G

      OMO.#: OMO-NRVTS2H60ESFT1G

      		 Schottky Diodes & Rectifiers TRENCH SCHOTTKY REC TIFIER
      74AUP1G59L6X

      Mfr.#: 74AUP1G59L6X

      OMO.#: OMO-74AUP1G59L6X

      		 Logic Gates 600V N-Channel MOSFET
      ATTINY416-MNR

      Mfr.#: ATTINY416-MNR

      OMO.#: OMO-ATTINY416-MNR

      		 8-bit Microcontrollers - MCU 105C Green 20MHz QFN 20 T&R
      22201C106MAT2A

      Mfr.#: 22201C106MAT2A

      OMO.#: OMO-22201C106MAT2A

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 10uF X7R 2220 20% Tol HIGH CV
      ADN8831ACPZ-REEL7

      Mfr.#: ADN8831ACPZ-REEL7

      OMO.#: OMO-ADN8831ACPZ-REEL7

      		 Laser Drivers HIGH PRECISION/EFFICIENCY TEC CONTROLLER
      ADN8831ACPZ-REEL7

      Mfr.#: ADN8831ACPZ-REEL7

      OMO.#: OMO-ADN8831ACPZ-REEL7-ANALOG-DEVICES-INC-ADI

      		 Laser Drivers HIGH PRECISION/EFFICIENCY TEC CONTROLLER
      AD4002BRMZ

      Mfr.#: AD4002BRMZ

      OMO.#: OMO-AD4002BRMZ-ANALOG-DEVICES

      		 18-BIT, 2 MSPS PULSAR ADC
      CBMF1608T470K

      Mfr.#: CBMF1608T470K

      OMO.#: OMO-CBMF1608T470K-TAIYO-YUDEN

      		 Fixed Inductors INDCTR BTM-SRF WND 0603 47uH 10%
      Қол жетімділік
      Қор:
      26
      Тапсырыс бойынша:
      2009
      Саны енгізіңіз:
      SIA533EDJ-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      0,63 $
      0,63 $
      10
      0,49 $
      4,87 $
      100
      0,36 $
      36,10 $
      500
      0,30 $
      148,50 $
      1000
      0,23 $
      229,00 $
      -ден бастаңыз
      Ең жаңа өнімдер
      More Newest Products
      Top