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BSC054N04NSGATMA1

BSC054N04NSGATMA1
Mfr. #:
BSC054N04NSGATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC054N04NSGATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
40 V
Идентификатор - үздіксіз төгу тогы:
81 A
Rds On - ағызу көзіне қарсылық:
4.5 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
34 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
57 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.27 mm
Ұзындығы:
5.9 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Ені:
5.15 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
34 S
Күз уақыты:
3.6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
2.6 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
16 ns
Қосудың әдеттегі кешігу уақыты:
11 ns
Бөлім # Бүркеншік аттар:
BSC054N04NS BSC54N4NSGXT G SP000354808
Tags
BSC054N04NSGA, BSC054N04NSG, BSC054, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 40 V 81 A 5.4 mO 26 nC SMT OptiMOS Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 40V 17A Automotive 8-Pin TDSON EP T/R
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:81A; On Resistance Rds(On):0.0045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 81A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Power Dissipation Pd:57W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
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*** Source Electronics
Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC
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MOSFET; N Ch.; 30V; 18A; 4.8 MOHM; 17 NC QG; SO-8; Pb-Free
***ark
MOSFET, N CH, 30V, 42A, POWER 56; Transistor Polarity:N Channel; Continuous Drai
*** Source Electronics
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 30V 19A POWER56
***ure Electronics
N-Channel 30 V 4.9 mO Surface Mount PowerTrench Mosfet - Power 56
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VISHAY SEMICONDUCTOR TSAL7600 Infrared Emitter, 100 mA, 800 ns, 800 ns, 30 , 1.35 V, -40 C
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Power Field-Effect Transistor, 19A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0312S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***or
N-CHANNEL POWER MOSFET
***el Electronic
Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
***ure Electronics
N-Channel 40 V 4.5 mOhm Surface Mount PwerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 40V 18.6A 8-Pin SOIC N T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 40V, 18.6A, 4.5mΩ
***rchild Semiconductor
The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ
***r Electronics
Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC054N04NSGATMA1
DISTI # V72:2272_06384762		Infineon Technologies AGTrans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R
RoHS: Compliant		225
  • 75000:$0.2352
  • 30000:$0.2376
  • 15000:$0.2480
  • 6000:$0.2586
  • 3000:$0.2706
  • 1000:$0.3038
  • 500:$0.3665
  • 250:$0.3706
  • 100:$0.3747
  • 50:$0.5270
  • 25:$0.5338
  • 10:$0.5407
  • 1:$0.6256
BSC054N04NSGATMA1
DISTI # BSC054N04NSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 81A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		20996In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
BSC054N04NSGATMA1
DISTI # BSC054N04NSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 81A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		20996In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
BSC054N04NSGATMA1
DISTI # BSC054N04NSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 81A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		20000In Stock
  • 5000:$0.3416
BSC054N04NSGATMA1
DISTI # 30171878		Infineon Technologies AGTrans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R
RoHS: Compliant		225
  • 250:$0.3706
  • 100:$0.3747
  • 50:$0.5270
  • 25:$0.5338
BSC054N04NSGATMA1
DISTI # BSC054N04NSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 17A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC054N04NSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2649
  • 10000:$0.2549
  • 20000:$0.2459
  • 30000:$0.2379
  • 50000:$0.2329
BSC054N04NSGATMA1.
DISTI # 15AC2222		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:81A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:57W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3260
  • 10000:$0.3140
  • 20000:$0.3020
  • 30000:$0.2920
  • 50000:$0.2870
BSC054N04NS G
DISTI # 726-BSC054N04NSG		Infineon Technologies AGMOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
RoHS: Compliant		2613
  • 1:$0.8600
  • 10:$0.7130
  • 100:$0.4600
  • 1000:$0.3680
BSC054N04NSGATMA1
DISTI # 726-BSC054N04NSGATMA		Infineon Technologies AGMOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
RoHS: Compliant		3523
  • 1:$0.8200
  • 10:$0.6790
  • 100:$0.4380
  • 1000:$0.3510
BSC054N04NSGATMA1
DISTI # 1775448		Infineon Technologies AGMOSFET, N CH, 81A, 40V, PG-TDSON-8
RoHS: Compliant		0
  • 1:$1.3700
  • 10:$1.1300
  • 100:$0.7280
  • 1000:$0.5830
  • 5000:$0.4930
BSC054N04NSGATMA1
DISTI # C1S322000595932		Infineon Technologies AGMOSFETs
RoHS: Compliant		325
  • 100:$0.3876
  • 50:$0.5289
  • 25:$0.5425
  • 10:$0.5453
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KSZ8864CNXI-TR

Mfr.#: KSZ8864CNXI-TR

OMO.#: OMO-KSZ8864CNXI-TR-MICROCHIP-TECHNOLOGY

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Қол жетімділік
Қор:
16
Тапсырыс бойынша:
1999
Саны енгізіңіз:
BSC054N04NSGATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,82 $
0,82 $
10
0,68 $
6,81 $
100
0,44 $
44,00 $
1000
0,35 $
352,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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