RF1S22N10SM

RF1S22N10SM
Mfr. #:
RF1S22N10SM
Өндіруші:
Rochester Electronics, LLC
Сипаттама:
Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
RF1S22N10SM Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Tags
RF1S2, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Бөлім № Mfg. Сипаттама Қор Бағасы
RF1S22N10SM9A
DISTI # 512-RF1S22N10SM9A
ON SemiconductorMOSFET 100V Single
RoHS: Not compliant
0
    RF1S22N10SMHarris SemiconductorPower Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    3853
    • 1000:$0.7200
    • 500:$0.7600
    • 100:$0.7900
    • 25:$0.8300
    • 1:$0.8900
    Сурет Бөлім № Сипаттама
    RF1S22N10SM

    Mfr.#: RF1S22N10SM

    OMO.#: OMO-RF1S22N10SM-1190

    Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S22N10SM9A

    Mfr.#: RF1S22N10SM9A

    OMO.#: OMO-RF1S22N10SM9A-1190

    MOSFET 100V Single
    RF1S23N06LE

    Mfr.#: RF1S23N06LE

    OMO.#: OMO-RF1S23N06LE-1190

    Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RF1S23N06LESM

    Mfr.#: RF1S23N06LESM

    OMO.#: OMO-RF1S23N06LESM-1190

    Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06

    Mfr.#: RF1S25N06

    OMO.#: OMO-RF1S25N06-1190

    - Bulk (Alt: RF1S25N06)
    RF1S25N06S3S

    Mfr.#: RF1S25N06S3S

    OMO.#: OMO-RF1S25N06S3S-1190

    Жаңа және түпнұсқа
    RF1S25N06SM

    Mfr.#: RF1S25N06SM

    OMO.#: OMO-RF1S25N06SM-1190

    Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06SM9A

    Mfr.#: RF1S25N06SM9A

    OMO.#: OMO-RF1S25N06SM9A-1190

    Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06SMR4643

    Mfr.#: RF1S25N06SMR4643

    OMO.#: OMO-RF1S25N06SMR4643-1190

    Жаңа және түпнұсқа
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    2500
    Саны енгізіңіз:
    RF1S22N10SM ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    1,08 $
    1,08 $
    10
    1,03 $
    10,26 $
    100
    0,97 $
    97,20 $
    500
    0,92 $
    459,00 $
    1000
    0,86 $
    864,00 $
    -ден бастаңыз
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