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SIZ998DT-T1-GE3

SIZ998DT-T1-GE3
Mfr. #:
SIZ998DT-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SIZ998DT-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ998DT-T1-GE3 DatasheetSIZ998DT-T1-GE3 Datasheet (P4-P6)SIZ998DT-T1-GE3 Datasheet (P7-P9)SIZ998DT-T1-GE3 Datasheet (P10-P12)SIZ998DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Көбірек ақпарат:
SIZ998DT-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PowerPAIR-6x5-8
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
20 A, 60 A
Rds On - ағызу көзіне қарсылық:
4.7 mOhms, 2.2 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.1 V
Vgs - Шлюз көзі кернеуі:
- 16 V, 20 V
Qg - қақпа заряды:
18 nC, 44.3 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
20.2 W, 32.9 W
Конфигурация:
Қосарлы
Арна режимі:
Жақсарту
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Биіктігі:
0.8 mm
Ұзындығы:
6 mm
Серия:
SIZ
Транзистор түрі:
2 N-Channel
Ені:
5 mm
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
80 S, 165 S
Күз уақыты:
10 ns, 10 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
65 ns, 65 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
10 ns, 17 ns
Қосудың әдеттегі кешігу уақыты:
15 ns, 25 ns
Tags
SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R
***ark
Dual N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes
***ment14 APAC
MOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Бөлім № Mfg. Сипаттама Қор Бағасы
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.6853
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7563
  • 500:$0.9580
  • 100:$1.2353
  • 10:$1.5630
  • 1:$1.7600
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7563
  • 500:$0.9580
  • 100:$1.2353
  • 10:$1.5630
  • 1:$1.7600
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R (Alt: SIZ998DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 50
  • 3000:€1.2409
  • 6000:€0.8899
  • 12000:€0.7219
  • 18000:€0.6379
  • 30000:€0.6109
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R (Alt: SIZ998DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    SIZ998DT-T1-GE3
    DISTI # SIZ998DT-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ998DT-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.6469
    • 6000:$0.6279
    • 12000:$0.6019
    • 18000:$0.5859
    • 30000:$0.5699
    SIZ998DT-T1-GE3
    DISTI # 43AC4021    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,, RoHS Compliant: Yes0
    • 1:$1.5900
    • 10:$1.3100
    • 25:$1.2100
    • 50:$1.1100
    • 100:$1.0100
    • 250:$0.9400
    • 500:$0.8700
    SIZ998DT-T1-GE3
    DISTI # 78-SIZ998DT-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		0
    • 1:$1.5600
    • 10:$1.2900
    • 100:$0.9840
    • 500:$0.8460
    • 1000:$0.6680
    • 3000:$0.6230
    SIZ998DT-T1-GE3
    DISTI # 2802799    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
    RoHS: Compliant    		0
    • 5:£1.3900
    • 25:£1.2600
    • 100:£0.9750
    SIZ998DT-T1-GE3
    DISTI # 2802799    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
    RoHS: Compliant    		0
    • 5:$2.6400
    • 25:$2.1800
    • 100:$1.7100
    • 250:$1.4100
    • 500:$1.1900
    • 1000:$1.1300
    • 5000:$1.0900
    SIZ998DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		Americas -
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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1986
      Саны енгізіңіз:
      SIZ998DT-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
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      1,28 $
      12,80 $
      100
      0,98 $
      98,40 $
      500
      0,85 $
      423,00 $
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